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MOSFETs: Properties, Preparations & Performance by Noah T. Andre (English) Hardc

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Item specifics

Condition
Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
ISBN-13
9781604567625
Type
NA
Publication Name
NA
ISBN
9781604567625
Book Title
Mosfets : Properties, Preparations and Performance
Publisher
NOVA Science Publishers, Incorporated
Item Length
7.1 in
Publication Year
2008
Format
Hardcover
Language
English
Illustrator
Yes
Author
Lucas M. Simon, Noah T. Andre
Genre
Technology & Engineering, Science
Topic
Electronics / Semiconductors, Chemistry / General
Item Weight
38.4 Oz
Item Width
10.2 in
Number of Pages
454 Pages

About this product

Product Information

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. It is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material, and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET. The width of the channel, which determines how well the device conducts, is controlled by an electrode called the gate, separated from channel by a thin layer of oxide insulation. The insulation keeps current from flowing between the gate and channel. MOSFETs are useful for high-speed switching applications and also on integrated circuits in computers.

Product Identifiers

Publisher
NOVA Science Publishers, Incorporated
ISBN-10
1604567627
ISBN-13
9781604567625
eBay Product ID (ePID)
66979465

Product Key Features

Book Title
Mosfets : Properties, Preparations and Performance
Number of Pages
454 Pages
Language
English
Publication Year
2008
Topic
Electronics / Semiconductors, Chemistry / General
Illustrator
Yes
Genre
Technology & Engineering, Science
Author
Lucas M. Simon, Noah T. Andre
Format
Hardcover

Dimensions

Item Weight
38.4 Oz
Item Length
7.1 in
Item Width
10.2 in

Additional Product Features

Dewey Edition
22
Lccn
2008-023105
Dewey Decimal
621.3815/284
Lc Classification Number
Tk7871.95.M665 2008
Table of Content
Preface; Novel Device Concepts to Overcome MOSFET Limits; Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures; Cryogenic Operation of Power MOSFETs; Redesign and Optimisation of Semiconductor Devices and Circuits; Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models; Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations; Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modelling; Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET ; Bulk FinFETs: Fabrication and Threshold Voltage ; Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques; A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range; Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown; MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications; Index.
Copyright Date
2008

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