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Charge-based Mos Transistor Modeling : The Ekv Model for Low-power And Rf Ic ...
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Located in: Jessup, Maryland, United States
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eBay item number:385216914861
Item specifics
- Condition
- Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
- ISBN
- 9780470855416
- Book Title
- Charge-Based Mos Transistor Modeling : the Ekv Model for Low-Power and RF Ic Design
- Item Length
- 9.9in
- Publisher
- Wiley & Sons, Incorporated, John
- Publication Year
- 2006
- Format
- Hardcover
- Language
- English
- Item Height
- 1in
- Genre
- Technology & Engineering
- Topic
- Electronics / Circuits / Integrated, Electronics / Circuits / General, Electronics / Transistors
- Item Width
- 6.9in
- Item Weight
- 26.9 Oz
- Number of Pages
- 328 Pages
About this product
Product Information
As technology scales down to sub-micron dimensions the modelling of MOS device operation becomes of greater concern. The EKV model has been developed to facilitate the modelling and simulation of low voltage devices for application in low power semiconductor technologies.
Product Identifiers
Publisher
Wiley & Sons, Incorporated, John
ISBN-10
047085541x
ISBN-13
9780470855416
eBay Product ID (ePID)
13038262706
Product Key Features
Book Title
Charge-Based Mos Transistor Modeling : the Ekv Model for Low-Power and RF Ic Design
Format
Hardcover
Language
English
Topic
Electronics / Circuits / Integrated, Electronics / Circuits / General, Electronics / Transistors
Publication Year
2006
Genre
Technology & Engineering
Number of Pages
328 Pages
Dimensions
Item Length
9.9in
Item Height
1in
Item Width
6.9in
Item Weight
26.9 Oz
Additional Product Features
Lc Classification Number
Tk7871.99.M44
Table of Content
Foreword. Preface. List of Symbols. 1. Introduction. 1.1 The Importance of Device Modeling for IC Design. 1.2 A Short History of the EKV MOST Model. 1.3 The Book Structure. PART I: THE BASIC LONG-CHANNELINTRINSIC CHARGE-BASED MODEL. 2. Introduction. 2.1 The N-channel Transistor Structure. 2.2 Definition of charges, current, potential and electric fields. 2.3 Transistor symbol and P-channel transistor. 3. The Basic Charge Model. 3.1 Poisson's Equation and Gradual Channel Approximation. 3.2 Surface potential as a Function of Gate Voltage. 3.3 Gate Capacitance. 3.4 Charge Sheet Approximation. 3.5 Density of Mobile Inverted Charge. 3.6 Charge-Potential Linearization. 4. Static Drain Current. 4.1 Drain Current Expression. 4.2 Forward and Reverse Current Components. 4.3 Modes of Operation. 4.4 Model of Drain Current Based on Charge Linearization. 4.5 Fundamental Property: Validity and Application. 4.6 Channel Length Modulation. 5. The Small-Signal Model. 5.1 The Static Small-Signal Model. 5.2 A General Non-Quasi-Static Small-Signal Model. 5.3 The Quasi-Static Dynamic Small-Signal Model. 6. The Noise Model. 6.1 Noise Calculation Methods. 6.2 Low-Frequency Channel Thermal Noise. 6.3 Flicker Noise. 6.4 Appendices. Appendix : The Nyquist and Bode Theorems. Appendix : General Noise Expression. 7. Temperature Effects and Matching. 7.1 Introduction. 7.2 Temperature Effects. PART II: THE EXTENDED CHARGE-BASED MODEL. 8. Non-Ideal Effects Related to the Vertical Dimension. 8.1 Introduction. 8.2 Mobility Reduction Due to the Vertical Field. 8.3 Non-Uniform Vertical Doping. 8.4 Polysilicon Depletion. 8.4.1 Definition of the Effect. 8.5 Band Gap Widening. 8.6 Gate Leakage Current. 9. Short-Channel Effects. 9.1 Velocity Saturation. 9.2 Channel Length Modulation. 9.3 Drain Induced Barrier Lowering. 9.4 Short-Channel Thermal Noise Model. 10. The Extrinsic Model. 10.1 Extrinsic Part of the Device. 10.2 Access Resistances. 10.3 Overlap Regions. 10.4 Source and Drain Junctions. 10.5 Extrinsic Noise Sources. PART III: THE HIGH-FREQUENCY MODEL. 11. Equivalent Circuit at RF. 11.1 RF MOS Transistor Structure and Layout. 11.2 What Changes at RF'. 11.3 Transistor Figures of Merit. 11.4 Equivalent Circuit at RF. 12. The Small-Signal Model at RF. 12.1 The Equivalent Small-Signal Circuit at RF. 12.2 Y-Parameters Analysis. 12.3 The Large-Signal Model at RF. 13. The Noise Model at RF. 13.1 The HF Noise Parameters. 13.2 The High-Frequency Thermal Noise Model. 13.3 HF Noise Parameters of a Common-Source Amplifier. References. Index.
Copyright Date
2006
Lccn
2006-041744
Dewey Decimal
621.3815284
Intended Audience
Trade
Dewey Edition
22
Illustrated
Yes
Item description from the seller
Seller assumes all responsibility for this listing.
eBay item number:385216914861
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Item location:
Jessup, Maryland, United States
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