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Group Iii-Nitrides and Their Heterostructur
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Located in: Tijeras, New Mexico, United States
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Estimated between Wed, 5 Nov and Sat, 8 Nov to 94104
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eBay item number:370312310974
Item specifics
- Condition
- ISBN
- 9783527404759
About this product
Product Identifiers
Publisher
Wiley & Sons, Incorporated, John
ISBN-10
3527404759
ISBN-13
9783527404759
eBay Product ID (ePID)
30236273
Product Key Features
Number of Pages
390 Pages
Language
English
Publication Name
Priority Programme of the Deutsche Forschungsgemeinschaft: Group III-Nitrides and Their Heterostructures : Growth, Characterization and Applications
Subject
Physics / Condensed Matter
Publication Year
2003
Type
Textbook
Subject Area
Science
Format
Hardcover
Dimensions
Item Height
0.7 in
Item Weight
26.1 Oz
Item Length
10 in
Item Width
7.6 in
Additional Product Features
Intended Audience
Scholarly & Professional
Table Of Content
Preface.Deposition and structural properties.Growth of GaN quasi-substrates by hydride vapor phase epitaxy (Wei Zhang and B.K. Meyer).Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon (A. Dadgar, et al.).Molecular beam epitaxy of cubic III-nitrides on GaAs substrates (D.J. As, et al.).Freestanding GaN-substrates and devices (Claudio R. Miskys, et al.).Surfactants and antisurfactants on group-III-nitride surfaces (J. Neugebauer).Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy (D. Gerthsen, et al.).A theoretical investigation of dislocations in cubic and hexagonal gallium nitride (A.T. Blumenau, et al.).Lattice dynamics in GaN and AIN probed with first-and second-order Raman spectroscopy (U. Haboeck, et al.).Electronic and optical properties.Electronic and vibrational properties of group-III nitrides: Ab initio studies (F. Bechstedt, et al.).Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry (A. Kasic, et al.).Mg in GaN: the structure of the acceptor and the electrical activity (H. Alves, et al.).Local vibrational modes and compensation effects in Mg-doped GaN (A. Hoffmann, et al.).Optical micro-characterization of group-III-nitrides: correlation of structural, electronic and optical properties (J. Christen, et al.).Optical properties of nitride heterostructures (Andreas Hangleiter).The origin of the PL photoluminescence Stokes shift in ternary group-III nitrides: field effects and localization (M. Strassburg, et al.).Devices and device issues.GaN based laser diodes - epitaxial growth and device fabrication (T. Böttcher, et al.).Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures (M. Röwe, et al.).Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part B: Sensor applications (M. Eickhoff, et al.).Influence of polarization of the properties of GaN based FET structures (M. Neuburger, et al.).Gallium-nitride-based devices on silicon (A, Dadgar, et al.).
Synopsis
physica status solidi (c) - conferences and critical reviews publishes conference proceedings, ranging from large international meetings to specialized topical workshops as well as collections of topical reviews on various areas of current solid state physics research. This Special Issue contains a series of Review Articles on several aspects of the epitaxy, materials science, and applications of group-III nitride films and heterostructures, written by participants of the Priority Programme (SPP) 1032 of the German Research Foundation (DFG). Main topics included are deposition and structure, electronic and optical properties as well as devices and device issues., Physica status solidi © - conferences and critical reviews publishes conference proceedings, ranging from large international meetings to specialize topical workshops as well as collections of topical reviews on various areas of current solid state physics research. This special issue contains a series of Review Articles on several aspects of epitaxy, materials science, and applications of group-III nitride films and heterostructures, written by participants of the Priority Programme (SPP) 1032 of the German Research Foundation (DFG). Main topics included are deposition and structure, electronic and optical properties as well as devices and device issues., This special issue of Physica Status Solidi contains a series of review articles on several aspects of the epitaxy, materials science, and applications of group-III nitride films and heterostructures, written by participants of the Priority Programme (SPP) 1032 of the German Research Foundation (DFG).
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- 0***n (49)- Feedback left by buyer.Past monthVerified purchaseAs described, prompt shipping, very well packaged. Thank you.
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- l***l (854)- Feedback left by buyer.Past 6 monthsVerified purchaseExcellent seller! Item as described, well packed...all good.
Popular categories from this store
Seller feedback (1,442)
- 0***n (49)- Feedback left by buyer.Past monthVerified purchaseAs described, prompt shipping, very well packaged. Thank you.
- l***u (191)- Feedback left by buyer.Past 6 monthsVerified purchaseI have only highmarks for this seller. I had a lot of questions and asked for more pictures about this item and he was more than willing to do whatever he could to help answer my questions. I would definitely buy from him again.Barcor / Starrett Chamfer Gage Micrometer 90-127° * 0.001" grad. 0-1.000" Dia. (#267283737990)
- l***l (854)- Feedback left by buyer.Past 6 monthsVerified purchaseExcellent seller! Item as described, well packed...all good.