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Rare-Earth Implanted MOS Devices for Silicon Photonics: Microstructura
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eBay item number:364691923759
Item specifics
- Condition
- Brand New: A new, unread, unused book in perfect condition with no missing or damaged pages. See all condition definitionsopens in a new window or tab
- ISBN-13
- 9783642144462
- Book Title
- Rare-Earth Implanted MOS Devices for Silicon Photonics
- ISBN
- 9783642144462
- Subject Area
- Technology & Engineering, Science
- Publication Name
- Rare-Earth Implanted Mos Structures : Microstructural, Electrical and Optoelectronic Properties
- Item Length
- 9.3 in
- Publisher
- Springer Berlin / Heidelberg
- Subject
- Lasers & Photonics, Electronics / Semiconductors, Materials Science / Electronic Materials, Chemistry / General
- Publication Year
- 2010
- Series
- Springer Series in Materials Science Ser.
- Type
- Textbook
- Format
- Hardcover
- Language
- English
- Item Width
- 6.1 in
- Item Weight
- 17.4 Oz
- Number of Pages
- Xviii, 174 Pages
About this product
Product Information
Wo Licht ist, ist auch Schatten ("More light, more shadow " or simpler: "Nothing is perfect") -Johann Wolfgang von Goethe, from Got ] z von Berlichingen, Act I There exist already about ten books (e. g. 1-8]) - not counting the many conf- enceproceedingsvolumes- onthe differentaspectsofSi-basedphotonicsincluding also the issue of silicon-basedlight emission. Why is now anotherone neededabout this subject, and even more, exclusively about a special type of light emitters? This book summarizes all aspects of the development of rare earth (RE) c- taining MOS devices fabricated by ion implantation as the key technology and critically re ects the related referencesthroughoutthe different chapters. This work was mainly done in the course of the last 10 years. Preliminary work for this goal, undertaken mostly in the nineties, was based on the introduction of group IV e- ments (Si, Ge, Sn) into the thermally grown silicon dioxide leading to the highest power ef ciency values in the blue-violet wavelength range. This success inspired us to use the REs as means of exploring other wavelength ranges with the same or even higher power ef ciencies. After an historical introduction of the REs and silicon-based light emission, Chap. 1 presents a review of electroluminescence from MOS-type light emitters, based on silicon and its technology. The achievement of an optimized material for electrically driven light emission, that is, ef cient emission with reasonable reliability, is only possible with a deep knowledge of the materials properties det- miningtheelectro-optical(orphotonic)properties(seeChap. 2).
Product Identifiers
Publisher
Springer Berlin / Heidelberg
ISBN-10
3642144462
ISBN-13
9783642144462
eBay Product ID (ePID)
92386936
Product Key Features
Publication Name
Rare-Earth Implanted Mos Structures : Microstructural, Electrical and Optoelectronic Properties
Format
Hardcover
Language
English
Subject
Lasers & Photonics, Electronics / Semiconductors, Materials Science / Electronic Materials, Chemistry / General
Publication Year
2010
Series
Springer Series in Materials Science Ser.
Type
Textbook
Subject Area
Technology & Engineering, Science
Number of Pages
Xviii, 174 Pages
Dimensions
Item Length
9.3 in
Item Width
6.1 in
Item Weight
17.4 Oz
Length
9.3in
Additional Product Features
LCCN
2010-938144
Series Volume Number
142
Number of Volumes
1 Vol.
Lc Classification Number
Qc374-379
Table of Content
Silicon-Based Light Emission.- Microstructure.- Electrical Properties.- Electroluminescence Spectra.- Electroluminescence Efficiency.- Stability and Degradation.- Applications.
Copyright Date
2010
Target Audience
Scholarly & Professional
Dewey Decimal
621.39/732
Dewey Edition
23
Illustrated
Yes
Item description from the seller
Seller assumes all responsibility for this listing.
eBay item number:364691923759
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Fairfield, Ohio, United States
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