New NTE2375 N-Ch MOSFET Enhancement Mode 100V 41A 230W High Speed Switch TO247

C $6.75
ApproximatelyS$ 6.26
or Best Offer
Condition:
New
Breathe easy. Returns accepted.
Shipping:
Does not ship to United States.
Located in: Milton, ON, Canada
Delivery:
Varies
Returns:
30 days return. Buyer pays for return shipping. If you use an eBay shipping label, it will be deducted from your refund amount.
Coverage:
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Seller assumes all responsibility for this listing.
eBay item number:277397030879
Last updated on Sep 26, 2025 07:26:29 SGTView all revisionsView all revisions

Item specifics

Condition
New: A brand-new, unused, unopened, undamaged item in its original packaging (where packaging is ...
Single Pulse Avalanche Energy, EAS
830 mJ
Configuration
Single
Avalanche Current, IAR
41 A
Input Capacitance, Ciss
2800 pF Typ.
Number of Elements per Chip
1
MPN
NTE2375
Peak Diode Recovery dv/dt
5.5 V/ns
Turn-Off Delay Time, td(off)
60 ns Typ.
Continuous Drain Current
41 A Max @ +25 *C
Gate Threshold Voltage VGS(th)
2 V Min., 4 V Max.
Pulsed Drain Current
120 A
Repetitive Avalanche Energy, EAR
19 mJ
Number of Pins
3
Maximum Operating Temperature
175 °C (347 °F)
Mounting Style
Through-Hole
Drain-to-Source Breakdown Voltage, V(BR)DSS
100 V Min.
Static Drain-to-Source On-Resistance, RDS(ON)
0.055 Ohm
Fall Time, tf
81 ns Typ.
Forward Transconductance, gfs
13 mhos Min.
Package/Case
TO247
Transistor Category
High Speed Switching
Minimum Operating Temperature
-55 °C (-67 °F)
Brand
NTE Electronics, INC.
Type
N-Channel Enhancement Mode MOSFET
Gate- to -Source Voltage, VGS
+/- 20 V
Turn-On Delay Time, td(on)
16 ns Typ.
Maximum Power Dissipation
230 W
Packaging
Bag
Rise Time, tr
120 ns Typ.
Country/Region of Manufacture
United States
Category

Item description from the seller

About this seller

mrgyltro

100% positive feedback177 items sold

Joined Jun 2009
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